j , o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. c158-c159 scr1200volts telephone: (973) 376-2922 ill a t?*o (212)227-6005 110a rms fax: (973) 376-8960 maximum allowable ratings type* c158e, c159e C158M, c159m c158s, c159s c158n, c159n c158t, c159t c158p, c159p c158pa, c159pa c158pb, c159pb repetitive peak off-state voltage, vdum t(, = -40c to + 125c 500 volts 600 700 800 900 1000 1100 1200 repetitive peak reverse voltage, v (l) vrhm t0 = -40cto +125c 500 volts 600 700 800 900 1000 1100 1200 non-repetitive peak reverse voltage, vusm'" tc = + 125c 600 volts 720 840 960 1080 1200 1300 1400 (1) half tine wave voltage pulte, 10 millisecond maximum duration. rms on-state current, it ho amperes average on-state current, it(av, (see charts) peak one cycle surge (non-rep) on-state current, itsm 1600 amperes pt (for fusing) for times g: 1.5 milliseconds 5200 ampere2 seconds ft (for fusing) for times g 8.3 milliseconds 10,500 ampere2 seconds critical rate-of-rise of on-state current, di/dt, during turn-on interval 800 amperes per microsecondf long term di/dt (refer to fig. 18, note 4) 500 a/> sec* peak gate power dissipation, pgm.., (pulse width = 10/tsec) 400 watts average gate power dissipation, pgiavi 2 watts peak negative gate voltage, vgm 20 volts storage temperature, tstg -40c to + 125c operating temperature, tj -40c to +125c stud torque 150 lb-in (max), 125 lb-in (min) 175 kg-cm (max), 150 kg-cm (min) trequired trigger source ? 20 volts, 20 ohms; maximum switching voltage ? 1200 volts; short-circuit gate supply current risetime -o.sjj sac (this short-circuit current may be measured with a tektronics current probe.). dl/dt rating ii *i?abli>hed in accordance with eia-nema suggested standard rs-397 section 5.1.2.4. immediate/ after each current pulte, off-itore (blecking) voltage capability may be temporarily lo?t for duration* leu than the period of the applied pulie repetition rate. the pulu repttitien rate for thil te?t u 400 hi: the duration of the di/dt telt condition it 5.0 tecondt (minimum). this rating established by long term life tests on similar devices. characteristics test peak reverse and off-state current c158e, c159e C158M, c159m c158s, c159s c1b8n, c159n c158t, c1b9t c168p, c159p c158pa, c169pa c158pb, c159pb symbol idku and iiikk min. ? ? ? ? ? typ. 3 3 3 3 3 3 3 3 max. 10 10 10 10 9 7 7 7 units ma test condition tv = +25c vdnii = vhk? = 500 volts peak 600 volts peak 700 volts peak 800 volts peak 900 volts peak 1000 volts peak 1100 volts peak 1200 volts peak
characteristics test peak reverse and off-state current c158e, c159e c1b8m, c159m c158s.c159s c1b8k, c159n c1b8t, c159t c158p, c159p c158pa, c159pa c1b8pb, c159pb effective thermal resistance critical exponential rate of rise of forward block- ing voltage (higher values may cause device switching) lolding current dc gate trigger current dc gate trigger voltage peak on-state voltage turn-on time (delay time -f rise time) delay time conventional circuit commutated turn-qff-time (with reverse voltage) conventional circuit commutated turn-off-time (with feedback diode) pulse circuit commutated turn-off-time (with reverse voltage) pulse circuit commutated turn-off-time (with feedback diode) symbol idrm and ihrm rojc dv/dt ih iut v?t vtm t,;t tu t,, tu (i|illtlr> tl| (puu?) tit (|iull?> (tlludt) min. ? ? 200 ? ? ? 0.15 ? " typ. 12 12 12 12 12 12 12 12 .2 500 100 80 150 30 3 1.25 2.8 2 0,5 20 25 40 25 40 max. 15 15 15 15 15 15 17 18 .3 150 300 125 5 3.0 3.5 ~ 30 40 ? t _1.l. __a units ma ?c/ watt v/mse madc madc madc madc vdc vdc vdc volts jisec msec jisec fisec msec lisec jisec teh condition tc = 125c v,,km = vbbm = 500 volts peak 600 volts peak 700 volts peak 800 volts peak 900 volts peak 1000 volts peak 1100 volts beak 1200 voltsjpeak junction to case (dc) vi.bm, tc = + 125c, gate open. tc = +25c, anode supply = 24vdc. initial forward current = 2 amps. t,. = +25c, vn = 6vdc, ri. = 3 ohms. t,- = -40c, vn = 6vdc, ri, = 3 ohms. t,- = + 125c, vn = 6 vdc, ri, = 3 ohms. tr = -40c to 0c, vn = 6 vdc, r,, = 3 ohms, t<- = 0c to +125c, v,, = 6 vdc, rt. = 3 ohm?. tr = 125c, vn??, r,. = 1000 ohms. tr = +25c, itm = 500a peak. duty cycle j .01%. t,- = +25c, it = 50 adc, v?*. gate supply: 10 volt open circuit, 20 ohm, 0.1 psec max. rise time, ttt tr = + 25c, it = 50 adc, vmm, gate supply: 10 volt open circuit, 20 ohm, 1.0 jtsec max. rise time, ft, ttt (1) to = +125c, (2) it = 150a. (3) vk = 50 volts min., (4) vi.km (reapplied), (5) rate of rise of reapplied forward blocking voltage = 20 v/^sec (linear). (6) commutation di/dt = 5 amps/^sec. (7) repetition rate = 1 pps. (8) gate bias during turn-oft" interval = 0 volts, 100 ohms. (1) tc = +125c, (2) it = 150a, (3) v? = 50 volts min., (4) vbhm (reapplied), (5) rate of rise of reapplied forward blocking voltage = 200 v/jusec (linear). (6) commutation di/dt = 5 amps/^sec. (7) repetition rate = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms. (1) to = +125c, (2) it = 150a, (3) v? = 1 volt (forward drop of ge a96 rectifier diode at it = 150a) , (4) v,,x?, (5) rate of rise of reapplied forward blocking voltage = 200 v/^sec (linear) . (6) commutation di/dt = 5 amps/msec. (7) repetition rate ? 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms. (1) tc= -fl25c, vn*m (reapplied), (2) rate of rise of reapplied forward blocking voltage = 200 v/mscc (linear), (3) rep. rate = 400 hz., (4) gate supply = 20 volts, 80 ohms, 1.0 m??c max, rise time. (5) it = 500 a peak, tp = 3 /usec (half sine wave) , (6) vk = 50 volts min. (1) tc = +125c, vhkm (reapplied), (2) rate of rise of reapplied forward blocking voltage = 200 v/^sec (linear), (3) rep, rate = 400 hz.. (4) gate supply = 20 volts, 80 ohms, 1.0 m?ec max. rise time, (5) it ? 500 a peak, tp = 3 ^sec (half sine wave) , (6) v? = 1 voltfforward drop of ge a96 rectifier diode at it = 150a). ttcmoy tlmt may incnat* ilgniflcanlly a? th? gat* driv* appraachtt th* tttcurrtnt rlutim* at nwaiurcd with a currmt probe, or vorlogi riitrlmo i,:t of th* d*vlc* und.r t*it (d.u.t.). acro? a non-lnductiv* r*tiit?r. quality semi-conductors
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